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IPD122N10N3GATMA1

IPD122N10N3GATMA1

IPD122N10N3GATMA1

MOSFET N-CH 100V 59A TO252-3

non-compliant

IPD122N10N3GATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.55825 -
5,000 $0.53034 -
12,500 $0.51040 -
4940 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 12.2mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 50 V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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