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IPD048N06L3GATMA1

IPD048N06L3GATMA1

IPD048N06L3GATMA1

MOSFET N-CH 60V 90A TO252-3

compliant

IPD048N06L3GATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.77880 $0.7788
500 $0.771012 $385.506
1000 $0.763224 $763.224
1500 $0.755436 $1133.154
2000 $0.747648 $1495.296
2500 $0.73986 $1849.65
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 2.2V @ 58µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8400 pF @ 30 V
FET Feature -
Power Dissipation (Max) 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-311
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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