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IPC100N04S5L1R9ATMA1

IPC100N04S5L1R9ATMA1

IPC100N04S5L1R9ATMA1

MOSFET N-CH 40V 100A 8TDSON-34

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IPC100N04S5L1R9ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $0.52273 -
10,000 $0.50308 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 4310 pF @ 25 V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-34
Package / Case 8-PowerTDFN
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