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IPBE65R099CFD7AATMA1

IPBE65R099CFD7AATMA1

IPBE65R099CFD7AATMA1

MOSFET N-CH 650V 24A TO263-7

compliant

IPBE65R099CFD7AATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $9.07000 $9.07
500 $8.9793 $4489.65
1000 $8.8886 $8888.6
1500 $8.7979 $13196.85
2000 $8.7072 $17414.4
2500 $8.6165 $21541.25
998 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2513 pF @ 400 V
FET Feature -
Power Dissipation (Max) 127W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-3-10
Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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