Welcome to ichome.com!

logo
Home

IPB80N06S2L07ATMA3

IPB80N06S2L07ATMA3

IPB80N06S2L07ATMA3

MOSFET N-CH 55V 80A TO263-3

compliant

IPB80N06S2L07ATMA3 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $0.98108 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3160 pF @ 25 V
FET Feature -
Power Dissipation (Max) 210W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

ZVN4525E6TA
SI2337DS-T1-E3
BUK9609-75A,118
IXFX120N30P3
IXFX120N30P3
$0 $/piece
NVD5414NT4G-VF01
NVD5414NT4G-VF01
$0 $/piece
PSMN2R1-40PLQ
DMN31D5UFZ-7B

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.