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IPB80N06S209ATMA1

IPB80N06S209ATMA1

IPB80N06S209ATMA1

MOSFET N-CH 55V 80A TO263-3

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IPB80N06S209ATMA1 Pricing & Ordering

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2000 items
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Name Value
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 125µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2360 pF @ 25 V
FET Feature -
Power Dissipation (Max) 190W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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