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IPB80N04S3H4ATMA1

IPB80N04S3H4ATMA1

IPB80N04S3H4ATMA1

MOSFET N-CH 40V 80A TO263-3

compliant

IPB80N04S3H4ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.56000 $0.56
500 $0.5544 $277.2
1000 $0.5488 $548.8
1500 $0.5432 $814.8
2000 $0.5376 $1075.2
2500 $0.532 $1330
13200 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 65µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 25 V
FET Feature -
Power Dissipation (Max) 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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