Welcome to ichome.com!

logo
Home

IPB80N04S2H4ATMA1

IPB80N04S2H4ATMA1

IPB80N04S2H4ATMA1

MOSFET N-CH 40V 80A TO263-3

compliant

IPB80N04S2H4ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
Call $Call -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 148 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 25 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

IRLI540N
IRF7467PBF
IRLR3714ZPBF
R6035KNZ1C9
STB70NF3LLT4
TPIC1301DW
TPIC1301DW
$0 $/piece
IRFU3711ZPBF
PH6030L,115
PH6030L,115
$0 $/piece
SI4448DY-T1-E3

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.