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IPB77N06S212ATMA1

IPB77N06S212ATMA1

IPB77N06S212ATMA1

MOSFET N-CH 55V 77A TO263-3

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IPB77N06S212ATMA1 Pricing & Ordering

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Name Value
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11.7mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 93µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1770 pF @ 25 V
FET Feature -
Power Dissipation (Max) 158W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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