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IPB65R190C6ATMA1

IPB65R190C6ATMA1

IPB65R190C6ATMA1

MOSFET N-CH 650V 20.2A D2PAK

compliant

IPB65R190C6ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.35000 $1.35
500 $1.3365 $668.25
1000 $1.323 $1323
1500 $1.3095 $1964.25
2000 $1.296 $2592
2500 $1.2825 $3206.25
513 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1620 pF @ 100 V
FET Feature -
Power Dissipation (Max) 151W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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