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IPB65R190C6ATMA1

IPB65R190C6ATMA1

IPB65R190C6ATMA1

MOSFET N-CH 650V 20.2A D2PAK

non-compliant

IPB65R190C6ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.35000 $1.35
500 $1.3365 $668.25
1000 $1.323 $1323
1500 $1.3095 $1964.25
2000 $1.296 $2592
2500 $1.2825 $3206.25
513 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1620 pF @ 100 V
FET Feature -
Power Dissipation (Max) 151W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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