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IPB60R199CPAATMA1

IPB60R199CPAATMA1

IPB60R199CPAATMA1

MOSFET N-CH 600V 16A D2PAK

non-compliant

IPB60R199CPAATMA1 Pricing & Ordering

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Name Value
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1520 pF @ 100 V
FET Feature -
Power Dissipation (Max) 139W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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