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IPB530N15N3GATMA1

IPB530N15N3GATMA1

IPB530N15N3GATMA1

MOSFET N-CH 150V 21A D2PAK

non-compliant

IPB530N15N3GATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $0.79662 -
1950 items
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Bom Cost Down
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Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 53mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 887 pF @ 75 V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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