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IPB50R199CP

IPB50R199CP

IPB50R199CP

MOSFET N-CH 500V 17A TO263-3-2

non-compliant

IPB50R199CP Pricing & Ordering

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1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
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2500 $0 $0
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id 3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 100 V
FET Feature -
Power Dissipation (Max) 139W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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