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IPB35N10S3L26ATMA1

IPB35N10S3L26ATMA1

IPB35N10S3L26ATMA1

MOSFET N-CH 100V 35A D2PAK

non-compliant

IPB35N10S3L26ATMA1 Pricing & Ordering

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1,000 $0.74283 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 26.3mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2.4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V
FET Feature -
Power Dissipation (Max) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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