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IPB180N04S4H0ATMA1

IPB180N04S4H0ATMA1

IPB180N04S4H0ATMA1

MOSFET N-CH 40V 180A TO263-7-3

compliant

IPB180N04S4H0ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $1.53694 -
2,000 $1.43095 -
5,000 $1.37795 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs 225 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 17940 pF @ 25 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
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