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IPB180N04S4H0ATMA1

IPB180N04S4H0ATMA1

IPB180N04S4H0ATMA1

MOSFET N-CH 40V 180A TO263-7-3

compliant

IPB180N04S4H0ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $1.53694 -
2,000 $1.43095 -
5,000 $1.37795 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs 225 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 17940 pF @ 25 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
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