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IPB160N04S4H1ATMA1

IPB160N04S4H1ATMA1

IPB160N04S4H1ATMA1

MOSFET N-CH 40V 160A TO263-7

compliant

IPB160N04S4H1ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $1.13373 -
2,000 $1.05554 -
5,000 $1.01644 -
10,000 $0.99512 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 137 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10920 pF @ 25 V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
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