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IPB110N20N3LFATMA1

IPB110N20N3LFATMA1

IPB110N20N3LFATMA1

MOSFET N-CH 200V 88A TO263-3

compliant

IPB110N20N3LFATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $4.34853 -
2,000 $4.18747 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 88A, 10V
Vgs(th) (Max) @ Id 4.2V @ 260µA
Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 100 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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