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IPB065N10N3GATMA1

IPB065N10N3GATMA1

IPB065N10N3GATMA1

MOSFET N-CH 100V 80A D2PAK

non-compliant

IPB065N10N3GATMA1 Pricing & Ordering

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1,000 $1.29626 -
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Name Value
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4910 pF @ 50 V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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