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IPB048N15N5ATMA1

IPB048N15N5ATMA1

IPB048N15N5ATMA1

MOSFET N-CH 150V 120A TO263-3

non-compliant

IPB048N15N5ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $3.75809 -
2,000 $3.61890 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.6V @ 264µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7800 pF @ 75 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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