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IPB039N10N3GE8187ATMA1

IPB039N10N3GE8187ATMA1

IPB039N10N3GE8187ATMA1

MOSFET N-CH 100V 160A TO263-7

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IPB039N10N3GE8187ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $1.67367 -
Inventory changes frequently.
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 160µA
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8410 pF @ 50 V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
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