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IPB035N08N3GATMA1

IPB035N08N3GATMA1

IPB035N08N3GATMA1

MOSFET N-CH 80V 100A D2PAK

compliant

IPB035N08N3GATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $1.80781 -
2,000 $1.71742 -
5,000 $1.65285 -
1001 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 155µA
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8110 pF @ 40 V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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