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IPB029N06N3GATMA1

IPB029N06N3GATMA1

IPB029N06N3GATMA1

MOSFET N-CH 60V 120A D2PAK

compliant

IPB029N06N3GATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $0.95700 -
2,000 $0.89100 -
5,000 $0.85800 -
10,000 $0.84000 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 118µA
Gate Charge (Qg) (Max) @ Vgs 165 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13000 pF @ 30 V
FET Feature -
Power Dissipation (Max) 188W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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