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IPB029N06N3GATMA1

IPB029N06N3GATMA1

IPB029N06N3GATMA1

MOSFET N-CH 60V 120A D2PAK

non-compliant

IPB029N06N3GATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $0.95700 -
2,000 $0.89100 -
5,000 $0.85800 -
10,000 $0.84000 -
0 items
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Wholesale Prices for Every Order, Big or Small
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 118µA
Gate Charge (Qg) (Max) @ Vgs 165 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13000 pF @ 30 V
FET Feature -
Power Dissipation (Max) 188W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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