Welcome to ichome.com!

logo
Home

IPB027N10N3GATMA1

IPB027N10N3GATMA1

IPB027N10N3GATMA1

MOSFET N-CH 100V 120A D2PAK

non-compliant

IPB027N10N3GATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $3.08447 -
2,000 $2.93025 -
740 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 275µA
Gate Charge (Qg) (Max) @ Vgs 206 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14800 pF @ 50 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

DMN3009SSS-13
BUK9M120-100EX
IXFH16N50P3
IXFH16N50P3
$0 $/piece
NTMYS3D3N06CLTWG
NTMYS3D3N06CLTWG
$0 $/piece
IXFX90N60X
IXFX90N60X
$0 $/piece
RD3L220SNFRATL
NTD60N03-001
NTD60N03-001
$0 $/piece
TN2640N3-G

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.