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IPB015N04LGATMA1

IPB015N04LGATMA1

IPB015N04LGATMA1

MOSFET N-CH 40V 120A D2PAK

non-compliant

IPB015N04LGATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $2.26457 -
2,000 $2.15134 -
2000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 346 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 28000 pF @ 25 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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