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IPA65R125C7XKSA1

IPA65R125C7XKSA1

IPA65R125C7XKSA1

MOSFET N-CH 650V 10A TO220-FP

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IPA65R125C7XKSA1 Pricing & Ordering

Quantity Unit Price Ext. Price
500 $2.92106 $1460.53
66955 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id 4V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 400 V
FET Feature -
Power Dissipation (Max) 32W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack
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