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IGT60R070D1ATMA4

IGT60R070D1ATMA4

IGT60R070D1ATMA4

GANFET N-CH

compliant

IGT60R070D1ATMA4 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $25.43000 $25.43
500 $25.1757 $12587.85
1000 $24.9214 $24921.4
1500 $24.6671 $37000.65
2000 $24.4128 $48825.6
2500 $24.1585 $60396.25
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) -10V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 400 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-3
Package / Case 8-PowerSFN
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