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IAUT165N08S5N029ATMA2

IAUT165N08S5N029ATMA2

IAUT165N08S5N029ATMA2

MOSFET N-CH 80V 165A 8HSOF

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IAUT165N08S5N029ATMA2 Pricing & Ordering

Quantity Unit Price Ext. Price
2,000 $1.88771 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 165A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6370 pF @ 40 V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-1
Package / Case 8-PowerSFN
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