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IAUC120N04S6N009ATMA1

IAUC120N04S6N009ATMA1

IAUC120N04S6N009ATMA1

MOSFET N-CH 40V 120A 8TDSON-33

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IAUC120N04S6N009ATMA1 Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 0.9mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 3.4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 115 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7360 pF @ 25 V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-33
Package / Case 8-PowerTDFN
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CSD19533Q5AT

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