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BSZ215CHXTMA1

BSZ215CHXTMA1

BSZ215CHXTMA1

MOSFET N/P-CH 20V 8TSDSON

compliant

BSZ215CHXTMA1 Pricing & Ordering

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Name Value
Product Status Active
FET Type N and P-Channel Complementary
FET Feature Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.1A, 3.2A
Rds On (Max) @ Id, Vgs 55mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 419pF @ 10V
Power - Max 2.5W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package PG-TSDSON-8
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