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BSZ100N06LS3GATMA1

BSZ100N06LS3GATMA1

BSZ100N06LS3GATMA1

MOSFET N-CH 60V 11A/20A 8TSDSON

non-compliant

BSZ100N06LS3GATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $0.40247 -
10,000 $0.38734 -
25,000 $0.38514 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 23µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 30 V
FET Feature -
Power Dissipation (Max) 2.1W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerVDFN
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