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BSZ0901NSIATMA1

BSZ0901NSIATMA1

BSZ0901NSIATMA1

MOSFET N-CH 30V 25A/40A TSDSON

non-compliant

BSZ0901NSIATMA1 Pricing & Ordering

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5,000 $0.53034 -
10,000 $0.51040 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 15 V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 2.1W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8-FL
Package / Case 8-PowerTDFN
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