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BSS209PW L6327

BSS209PW L6327

BSS209PW L6327

MOSFET P-CH 20V 580MA SOT323-3

non-compliant

BSS209PW L6327 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 580mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 550mOhm @ 580mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 3.5µA
Gate Charge (Qg) (Max) @ Vgs 1.38 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 89.9 pF @ 15 V
FET Feature -
Power Dissipation (Max) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT323
Package / Case SC-70, SOT-323
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