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BSC886N03LSGATMA1

BSC886N03LSGATMA1

BSC886N03LSGATMA1

MOSFET N-CH 30V 13A/65A TDSON

compliant

BSC886N03LSGATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $0.25334 -
10,000 $0.24396 -
25,000 $0.23884 -
8585 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 39W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN
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