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BSC196N10NSGATMA1

BSC196N10NSGATMA1

BSC196N10NSGATMA1

MOSFET N-CH 100V 8.5A/45A TDSON

compliant

BSC196N10NSGATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $0.48177 -
10,000 $0.46365 -
4568 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 19.6mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 42µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 50 V
FET Feature -
Power Dissipation (Max) 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN
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