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BSC190N12NS3GATMA1

BSC190N12NS3GATMA1

BSC190N12NS3GATMA1

MOSFET N-CH 120V 8.6A/44A TDSON

non-compliant

BSC190N12NS3GATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $0.77030 -
10,000 $0.74467 -
1726 items
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Bom Cost Down
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 8.6A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 39A, 10V
Vgs(th) (Max) @ Id 4V @ 42µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 60 V
FET Feature -
Power Dissipation (Max) 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN
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