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BSC0901NSIATMA1

BSC0901NSIATMA1

BSC0901NSIATMA1

MOSFET N-CH 30V 28A/100A TDSON

compliant

BSC0901NSIATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $0.54863 -
10,000 $0.52800 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 15 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-6
Package / Case 8-PowerTDFN
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