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BSC084P03NS3EGATMA1

BSC084P03NS3EGATMA1

BSC084P03NS3EGATMA1

MOSFET P-CH 30V 14.9A 8TDSON

compliant

BSC084P03NS3EGATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $0.48191 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Not For New Designs
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 14.9A (Ta), 78.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 8.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 57.7 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 4240 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-5
Package / Case 8-PowerTDFN
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