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BSC082N10LSGATMA1

BSC082N10LSGATMA1

BSC082N10LSGATMA1

MOSFET N-CH 100V 13.8A 8TDSON

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BSC082N10LSGATMA1 Pricing & Ordering

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5,000 $1.17975 -
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Name Value
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 13.8A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7400 pF @ 50 V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN
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