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BSC0802LSATMA1

BSC0802LSATMA1

BSC0802LSATMA1

MOSFET N-CH 100V 20A/100A TDSON

compliant

BSC0802LSATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.76000 $3.76
500 $3.7224 $1861.2
1000 $3.6848 $3684.8
1500 $3.6472 $5470.8
2000 $3.6096 $7219.2
2500 $3.572 $8930
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.3V @ 115µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 50 V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-7
Package / Case 8-PowerTDFN
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