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BSC060P03NS3EGATMA1

BSC060P03NS3EGATMA1

BSC060P03NS3EGATMA1

MOSFET P-CH 30V 17.7/100A 8TDSON

compliant

BSC060P03NS3EGATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $0.48279 -
10,000 $0.46464 -
0 items
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 17.7A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 6020 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN
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