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BSB056N10NN3GXUMA1

BSB056N10NN3GXUMA1

BSB056N10NN3GXUMA1

MOSFET N-CH 100V 9A/83A 2WDSON

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BSB056N10NN3GXUMA1 Pricing & Ordering

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5,000 $1.56119 -
7880 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 5.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package MG-WDSON-2, CanPAK M™
Package / Case 3-WDSON
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