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HTNFET-D

HTNFET-D

HTNFET-D

Honeywell Aerospace

MOSFET N-CH 55V 8CDIP

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HTNFET-D Pricing & Ordering

Quantity Unit Price Ext. Price
1 $406.00000 $406
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 400mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id 2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 4.3 nC @ 5 V
Vgs (Max) 10V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 28 V
FET Feature -
Power Dissipation (Max) 50W (Tj)
Operating Temperature -55°C ~ 225°C (TJ)
Mounting Type Through Hole
Supplier Device Package 8-CDIP-EP
Package / Case 8-CDIP Exposed Pad
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