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GT105N10T

GT105N10T

GT105N10T

N100V,RD(MAX)<10.5M@10V,RD(MAX)<

non-compliant

GT105N10T Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.42000 $1.42
500 $1.4058 $702.9
1000 $1.3916 $1391.6
1500 $1.3774 $2066.1
2000 $1.3632 $2726.4
2500 $1.349 $3372.5
25 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
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