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GT100N12T

GT100N12T

GT100N12T

N120V,RD(MAX)<10M@10V,VTH2.5V~3.

non-compliant

GT100N12T Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.82000 $1.82
500 $1.8018 $900.9
1000 $1.7836 $1783.6
1500 $1.7654 $2648.1
2000 $1.7472 $3494.4
2500 $1.729 $4322.5
70 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3050 pF @ 60 V
FET Feature -
Power Dissipation (Max) 120W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
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