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GC20N65Q

GC20N65Q

GC20N65Q

N650V,RD(MAX)<170M@10V,VTH2.5V~4

non-compliant

GC20N65Q Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.85000 $3.85
500 $3.8115 $1905.75
1000 $3.773 $3773
1500 $3.7345 $5601.75
2000 $3.696 $7392
2500 $3.6575 $9143.75
50 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1724 pF @ 100 V
FET Feature -
Power Dissipation (Max) 151W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
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