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GC11N65F

GC11N65F

GC11N65F

N650V,RD(MAX)<360M@10V,VTH2.5V~4

non-compliant

GC11N65F Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.95000 $1.95
500 $1.9305 $965.25
1000 $1.911 $1911
1500 $1.8915 $2837.25
2000 $1.872 $3744
2500 $1.8525 $4631.25
49 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11A
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 901 pF @ 50 V
FET Feature -
Power Dissipation (Max) 31.3W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack
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