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G01N20LE

G01N20LE

G01N20LE

N200V,RD(MAX)<850M@10V,RD(MAX)<9

compliant

G01N20LE Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.50000 $0.5
500 $0.495 $247.5
1000 $0.49 $490
1500 $0.485 $727.5
2000 $0.48 $960
2500 $0.475 $1187.5
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 580 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
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