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EPC2111

EPC2111

EPC2111

EPC

GAN TRANS ASYMMETRICAL HALF BRID

compliant

EPC2111 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $1.54000 -
21750 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 16A (Ta)
Rds On (Max) @ Id, Vgs 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Vgs(th) (Max) @ Id 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 5V, 5.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 15V, 590pF @ 15V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
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