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EPC2110ENGRT

EPC2110ENGRT

EPC2110ENGRT

EPC

GAN TRANS 2N-CH 120V BUMPED DIE

compliant

EPC2110ENGRT Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $1.02200 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 N-Channel (Dual) Common Source
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 120V
Current - Continuous Drain (Id) @ 25°C 3.4A
Rds On (Max) @ Id, Vgs 60mOhm @ 4A, 5V
Vgs(th) (Max) @ Id 2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 60V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
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