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EPC2110ENGRT

EPC2110ENGRT

EPC2110ENGRT

EPC

GAN TRANS 2N-CH 120V BUMPED DIE

SOT-23

non-compliant

EPC2110ENGRT Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $1.02200 -
0 items
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Bom Cost Down
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Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 N-Channel (Dual) Common Source
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 120V
Current - Continuous Drain (Id) @ 25°C 3.4A
Rds On (Max) @ Id, Vgs 60mOhm @ 4A, 5V
Vgs(th) (Max) @ Id 2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 60V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
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