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EPC2105

EPC2105

EPC2105

EPC

GAN TRANS ASYMMETRICAL HALF BRID

compliant

EPC2105 Pricing & Ordering

Quantity Unit Price Ext. Price
500 $4.85150 $2425.75
1,000 $4.38200 -
2362 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 9.5A, 38A
Rds On (Max) @ Id, Vgs 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 2.5mA, 2.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V, 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 40V, 1100pF @ 40V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
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